Product Description
The BYI-1 is a semiconductor device specifically designed for use in linear bias circuitry. The byistor acts as a low impedance D.C. bias source which has two models for thermal composition.
Maximum Power Dissipation@25°c: 11Watts
BVees Collector to Emitter Voltage: 55Volts
BVebo Emitter to Base Voltage: 4.0Volts
IC Collector Current: 0.7A
Operating Junction Temperature: +150°C