Product Description
N-P-N silicon planar expitaxial transistor primarily intended for use in linear UHF amplifiers of TV transposers and transmitters in band IV-V, as well as for driver stages in tube systems.
Features:
- Diffused emitter ballasting resistors for an optimum temperature profile.
- Gold sandwich metalization ensures excellent reliability.
- The transistor has a ΒΌ" capstan envelope with ceramic cap. All leads are isolated from the stud.
