Designed for broadband commercial and industrial applications with  frequencies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for large--signal, common source amplifier applications in 28/32 volt transmitter equipment

FEATURES:

• Integrated ESD Protection
• excellent Thermal Stability
• Characterized with Differential Large - Signal Impedance Parameters
• RoHS Compliant

SPECIFICATIONS:

Transistor Type: MOSFET Power
Vds-Drain Source Breakdown Voltage:70V
Transistor Polarity: N-Channel
Technology: Si
Vgs-Gate Source Breakdown Voltage: -0.5V, +15V
Max Operating Temp: +150°C
Minimum Operating Temperature: -65°C
Pd - Power Dissipation: 302W