Product Description
Infineon / Eupec FZ1600R12KE3 Insulated Gate Bipolar Transistor Modules IGBT / Power Semiconductor -1200V 1600A BNIB / NOS
Specifications
- Item Number: FZ1600R12KE3
- Manufacturer: Infineon, Formerly Eupec
- Type: Single
- Collector Emitter Voltage / Vces: 1,200 Volts
- DC Collector Current / Ic: 1,600 Amps, nominal
- Gate Emitter Peak Voltage / Vges: +/-20 V
- Collector Emitter Cut-off Current : 5 mA max
- Gate Emitter Leakage Current / Iges: 400 nA
- Gate Threshold Voltage / Vge(th): 5 min, 6.5 V max
- Collector Emitter Saturation Voltage / Vce(sat): 2.15 Volts max
- Dimensions HxWxD: 38 x 130 x 140 mm
