Product Description
NPN transistor mounted in a four-lead dual-emitter SOT122A envelope with a ceramic cap. All leads are isolated from the stud. Diffused emitter-ballasting resistors and the application of gold sandwichmetallization ensure an optimum temperature profile and excellent reliability properties. It features very high output voltage capabilities.
Collector-emitter Voltage: Open Base 18V
Collector Current: -300mA
Total Power Dissipation: up to Tc = 110°C - 4.5W
Transistion Freqquency: 4 GHz
Output Voltage: 1.6V
