Home›Products›Active Components›Transistors, MOSFETs & IGBTs›Infineon / Eupec FZ1600R12KE3 Insulated Gate Bipolar Transistor Modules IGBT / Power Semiconductor 1200V 1600A
Infineon / Eupec FZ1600R12KE3 Insulated Gate Bipolar Transistor Modules IGBT / Power Semiconductor 1200V 1600A
sku861210+ in stock
Request a Quote
By Infineon
<p>Infineon / Eupec FZ1600R12KE3 Insulated Gate Bipolar Transistor Modules IGBT / Power Semiconductor -1200V 1600A BNIB /  NOS</p><p>Specifications</p><ul><li>Item Number: FZ1600R12KE3</li><li>Manufacturer:  Infineon, Formerly Eupec</li><li>Type: Single</li><li>Collector Emitter Voltage / …
Description
<p>Infineon / Eupec FZ1600R12KE3 Insulated Gate Bipolar Transistor Modules IGBT / Power Semiconductor -1200V 1600A BNIB /  NOS</p><p>Specifications</p><ul><li>Item Number: FZ1600R12KE3</li><li>Manufacturer:  Infineon, Formerly Eupec</li><li>Type: Single</li><li>Collector Emitter Voltage / Vces: 1,200 Volts</li><li>DC Collector Current / Ic: 1,600 Amps, nominal</li><li>Gate Emitter Peak Voltage / Vges:  +/-20 V</li><li>Collector Emitter Cut-off Current : 5 mA max</li><li>Gate Emitter Leakage Current / Iges: 400 nA</li><li>Gate Threshold Voltage / Vge(th):  5 min, 6.5 V max</li><li>Collector Emitter Saturation Voltage / Vce(sat): 2.15 Volts max</li><li>Dimensions HxWxD: 38 x 130 x 140 mm
 </li></ul><p> </p>
 </li></ul><p> </p>