Home›Products›Active Components›Transistors, MOSFETs & IGBTs›Freescale MRF374A RF Mosfet Transistors RF Power LDMOS U650 BNIB / NOS
Freescale MRF374A RF Mosfet Transistors RF Power LDMOS U650 BNIB / NOS
sku1157210+ in stock
$90.00CAD
By Freescale
<p> Designed for broadband commercial and industrial applications with  frequencies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for large--signal, common source amplifier applications in 28/32 volt transmitter equipment</p><p>FEATURES: </p><…
Description
<p> Designed for broadband commercial and industrial applications with  frequencies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for large--signal, common source amplifier applications in 28/32 volt transmitter equipment</p><p><font face="Georgia">FEATURES:
</p><ul><li><font face="Georgia">Integrated ESD Protection</li><li><font face="Georgia">excellent Thermal Stability</li><li><font face="Georgia">Characterized with Differential Large - Signal Impedance Parameters</li><li><font face="Georgia">RoHS Compliant</li></ul><p><font face="Georgia">SPECIFICATIONS:
Transistor Type: MOSFET Power
Vds-Drain Source Breakdown Voltage:70V
Transistor Polarity: N-Channel
Technology: Si
Vgs-Gate Source Breakdown Voltage: -0.5V, +15V
Max Operating Temp: +150°C
Minimum Operating Temperature: -65°C
Pd - Power Dissipation: 302W</p><p> </p><p> </p>
</p><ul><li><font face="Georgia">Integrated ESD Protection</li><li><font face="Georgia">excellent Thermal Stability</li><li><font face="Georgia">Characterized with Differential Large - Signal Impedance Parameters</li><li><font face="Georgia">RoHS Compliant</li></ul><p><font face="Georgia">SPECIFICATIONS:
Transistor Type: MOSFET Power
Vds-Drain Source Breakdown Voltage:70V
Transistor Polarity: N-Channel
Technology: Si
Vgs-Gate Source Breakdown Voltage: -0.5V, +15V
Max Operating Temp: +150°C
Minimum Operating Temperature: -65°C
Pd - Power Dissipation: 302W</p><p> </p><p> </p>